Research Group

Jiang DongYang, Liang Qi, Sai Weng Sin, Franco Maloberti, R. P. Martins, A 5MHz-BW, 86.1dB-SNDR 4X Time-Interleaved 2nd-order ΔΣ Modulator with Digital Feedforward Extrapolation in 28nm CMOS

2020 Symposium on VLSI Circuits Digest of Technical Papers

Jun-2020

Mo Huang, Yan Lu, R. P. Martins, An Analog-Proportional Digital-Integral Multiloop Digital LDO With PSR Improvement and LCO Reduction

IEEE Journal of Solid-State Circuits

vol. 55, no. 6, pp. 1637–1650, Jun-2020

Junmin Jiang, Xun Liu, Wing-Hung Ki, Philip K. T. Mok, Yan Lu, A Multi-Phase Switched-Capacitor Converter for Fully Integrated AMLED Micro Display System

IEEE Transactions on Power Electronics

Vol.35, No 6, pp 6001-6011 Jun-2020

Jiao Zhai, Haoran Li, Ada Hang-Heng Wong, Cheng Dong, Shuhong Yi, Yanwei Jia, Pui In Mak, Chuxia Deng, R. P. Martins, A Digital Microfluidic System with 3D Microstructures for Single-Cell Culture

Microsystems & Nanoengineering (Nature Publishing Group)

(2020) 6:6 Jun-2020

Wei Wang, Chi Hang Chan, Yan Zhu, R. P. Martins, A 100-MHz BW 72.6-dB-SNDR CT ΔΣ Modulator Utilizing Preliminary Sampling and Quantization

IEEE Journal of Solid-State Circuits

vol. 55, no. 6, pp. 1588-1598 Jun-2020

Guigang Cai, ChenChang Zhan, Yan Lu, A Fast-Transient-Response Fully-Integrated Digital LDO with Adaptive Current Step Size Control

IEEE International Symposium on Circuits and Systems (ISCAS)

Jun-2020

Mingqiang Guo, Jiaji Mao, Sai Weng Sin, Hegong Wei, R. P. Martins, A 1.6GS/s 12.2mW 7/8-way Split Time-interleaved SAR ADC with Digital Background Mismatch Calibration

IEEE Custom Integrated Circuits Conference (CICC)

Apr-2019

Mingqiang Guo, Jiaji Mao, Sai Weng Sin, Hegong Wei, R. P. Martins, A 29mW 5GS/s Time-interleaved SAR ADC achieving 48.5dB SNDR With Fully-Digital Timing-Skew Calibration Based on Digital-Mixing

IEEE Symposium on VLSI Circuits (VLSI)

Jun-2019

Nandini Viteea, Harikrishnan Ramiah, Pui In Mak, Jun Yin, R. P. Martins, A 1-V 4-mW Multiple-Feedback Differential-Folded Mixer Achieving 18.4-dB Conversion Gain, +12.5-dBm IIP3 and 8.5-dB NF

IEEE Transactions on VLSI Systems

vol. 28, pp. 1164-1174 May-2020

Xin Lu, Man-Kay Law, Yang Jiang, Xiaojin Zhao, Pui In Mak, R. P. Martins, A 4μm Diameter SPAD Using Less-doped N-Well Guard Ring in Baseline 65nm CMOS

IEEE Transactions on Electron Devices

vol. 67, pp. 2223-2225 May-2020