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A 4μm Diameter SPAD Using Less-doped N-Well Guard Ring in Baseline 65nm CMOS

Home/A 4μm Diameter SPAD Using Less-doped N-Well Guard Ring in Baseline 65nm CMOS
2020-07-02T00:00:00+08:002020-07-02|Uncategorized|
2021-02-03T15:40:08+08:002020-05-01|Achievements, Research Group, Wireless IC, Type, Journals and magazines|
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