Type

Junmin Jiang, Xun Liu, Wing-Hung Ki, Philip K. T. Mok, Yan Lu, A Multi-Phase Switched-Capacitor Converter for Fully Integrated AMLED Micro Display System

IEEE Transactions on Power Electronics

Vol.35, No 6, pp 6001-6011 Jun-2020

Jiao Zhai, Haoran Li, Ada Hang-Heng Wong, Cheng Dong, Shuhong Yi, Yanwei Jia, Pui In Mak, Chuxia Deng, R. P. Martins, A Digital Microfluidic System with 3D Microstructures for Single-Cell Culture

Microsystems & Nanoengineering (Nature Publishing Group)

(2020) 6:6 Jun-2020

Wei Wang, Chi Hang Chan, Yan Zhu, R. P. Martins, A 100-MHz BW 72.6-dB-SNDR CT ΔΣ Modulator Utilizing Preliminary Sampling and Quantization

IEEE Journal of Solid-State Circuits

vol. 55, no. 6, pp. 1588-1598 Jun-2020

Guigang Cai, ChenChang Zhan, Yan Lu, A Fast-Transient-Response Fully-Integrated Digital LDO with Adaptive Current Step Size Control

IEEE International Symposium on Circuits and Systems (ISCAS)

Jun-2020

Xiaopeng Zhong, Man-Kay Law, Chi-Ying Tsui, A. Bermak, A Fully Dynamic Multi-Mode CMOS Vision Sensor With Mixed-Signal Cooperative Motion Sensing and Object Segmentation for Adaptive Edge Computing

IEEE Journal of Solid-State Circuits

vol. 55, no. 6, pp. 1684-1697 Jun-2020

Fangyu Mao, Yan Lu, Edoardo Bonizzoni, Filippo Boera, Mo Huang, Franco Maloberti, R. P. Martins, A 10.4mW 50MHz-BW 80dB-DR Single-Opamp Third-Order CTSDM with SABELD-Merged Integrator and 3-Stage Opamp

VLSI 2020

Jun-2020

Kai Xing, Lei Wang, Yan Zhu, Chi Hang Chan, R. P. Martins, A 10.4mW 50MHz-BW 80dB-DR Single-Opamp Third-Order CTSDM with SABELD-Merged Integrator and 3-Stage Opamp

2020 Symposia on VLSI Technology and Circuits

Jun-2020

Xin Lu, Man-Kay Law, Yang Jiang, Xiaojin Zhao, Pui-In Mak, and Rui P. Martins, A 4-μm Diameter SPAD Using Less-Doped N-Well Guard Ring in Baseline 65-nm CMOS

IEEE Transactions on Electron Devices (TED)

Vol 67. Issue 5, 2020. May-2020

Nandini Viteea, Harikrishnan Ramiah, Pui In Mak, Jun Yin, R. P. Martins, A 1-V 4-mW Multiple-Feedback Differential-Folded Mixer Achieving 18.4-dB Conversion Gain, +12.5-dBm IIP3 and 8.5-dB NF

IEEE Transactions on VLSI Systems

vol. 28, pp. 1164-1174 May-2020

Xin Lu, Man-Kay Law, Yang Jiang, Xiaojin Zhao, Pui In Mak, R. P. Martins, A 4μm Diameter SPAD Using Less-doped N-Well Guard Ring in Baseline 65nm CMOS

IEEE Transactions on Electron Devices

vol. 67, pp. 2223-2225 May-2020