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A 2-μm InGaP/GaAs Class-J Power Amplifier for Multi-band LTE Achieving 35.8-dB Gain, 40.5%-to-55.8% PAE and 28-dBm Linear Output Power

Home/A 2-μm InGaP/GaAs Class-J Power Amplifier for Multi-band LTE Achieving 35.8-dB Gain, 40.5%-to-55.8% PAE and 28-dBm Linear Output Power
2016-02-03T00:00:00+08:002016-02-03|Uncategorized|
2016-01-01T00:00:00+08:002016-01-01|Achievements, Research Group, Wireless IC, Type, Journals and magazines|
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