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Process compensated bipolar junction transistor-based CMOS temperature sensor with a ±1.5°C (3σ) batch-to-batch inaccuracy

Home/Process compensated bipolar junction transistor-based CMOS temperature sensor with a ±1.5°C (3σ) batch-to-batch inaccuracy
2019-08-01T00:00:00+08:002019-08-01|Uncategorized|
2018-11-01T00:00:00+08:002018-11-01|Achievements, Research Group, Wireless IC, Type, Journals and magazines|
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