The Distinguished Lecture on “Smart Gate Drivers for GaN and SiC Power Devices” will take place as follows:
Date: 09 May 2023 (Tuesday)
Time: 10:30am – 12:00pm
Venue: Research Building N21, 3/F, 3004
The speaker is:
Prof. NG Wai Tung, The Edwar S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto
The Lecture is:
Smart Gate Drivers for GaN and SiC Power Devices
Wide bandgap (WBG) power devices are attracting wide adoption in modern power electronics. As the Si-based power device technology is reaching its theoretical performance limit, more and more efforts have been placed on the gate driver design to further improve the device performance. Recent trends for smart gate driver ICs are to integrate a variety of complex functions to provide better protection, monitoring, and local control of the switching behaviors of the power devices. This presentation starts with the reviews of basic gate driving requirements. This is followed by the introduction of recent developments in smart integrated gate drivers that are specific to the stringent requirements for GaN and SiC power transistors. Smart gate driver ICs with innovative integrated features such as dynamic gate driving and dead-time correction to minimize EMI and switching losses will be discussed. Techniques to provide picosecond time resolutions to automate the determination of the dynamic gate drive profiles dedicated by these much faster WBG power devices will be described. Finally, new gate drive features such as health monitoring, aging detection and compensation for the SiC devices will also be proposed.
Prof. NG Wai Tung (M’90, SM’04) received his B.A.Sc., M.A.Sc., and Ph.D. degrees in Electrical Engineering from the University of Toronto, in 1983, 1985 and 1990, respectively. Prof. Ng is with the Edward S. Rogers Sr. Dept. of Electrical and Computer Engineering from the University of Toronto. He is also the director of the Toronto Nanofabrication Center (TNFC), and open access research facility. Prof. Ng is a recognized researcher in the areas of power semiconductor devices and smart power integrated circuits. His research group has demonstrated many world-first innovative designs, including a digitally reconfigurable DC-DC power converter with resizable output stage [ISPSD 2006], a superjunction power FinFET [IEDM 2010], and a series of smart gate driver integrated circuits for Insulated Gate Bipolar Transistors (IGBTs) and Gallium Nitride (GaN) power transistors. Currently, Prof. Ng’s group is actively engaged in the promotion of digitally reconfigurable gate driver circuits to improve the switching characteristics of GaN and Silicon Carbide (SiC) power transistors. These include many novel features such as one-step dead-time correction, indirect current sensing, dynamic driving strength to suppress Electromagnetic Interference (EMI), liquid-cooled packaging for intelligent power modules (IPMs), etc.
For more details, kindly find the event poster, abstract and bio.