A 2-μm InGaP/GaAs Class-J Power Amplifier for Multi-band LTE Achieving 35.8-dB Gain, 40.5%-to-55.8% PAE and 28-dBm Linear Output Power
首頁/A 2-μm InGaP/GaAs Class-J Power Amplifier for Multi-band LTE Achieving 35.8-dB Gain, 40.5%-to-55.8% PAE and 28-dBm Linear Output Power
