The Distinguished Lecture on “A Review of Active Gate Drivers for SiC Power MOSFETs” will take place as follows:
Date: 04 November 2025 (Tuesday)
Time: 10:00 – 11:00
Venue: Research Building N21, G/F, G013
The speaker is:
Prof. ZHANG Weijia, Assistant Professor, HKUST, Hong Kong
The Lecture is:
A Review of Active Gate Drivers for SiC Power MOSFETs
Abstract:
Active gate drivers (AGDs) have emerged as a promising field to enhance the efficiency and performance of power MOSFETs by dynamically regulating the hard-switching slew rate, enabling calibrated trade-off among efficiency and EMI suppression, and providing device protection. This paper reviews recent AGD topologies for silicon carbide power MOSFETs, covering the segmented gate-drive strategy, the slew rate adjustment techniques, and the protection schemes for reliability. This paper primarily focuses on topics including short-circuit protection, current balancing, and thermal management in parallel-connected power systems. The benefits, limitations, and applications of each approach are compared and analyzed.
Biography:
Prof. ZHANG Weijia received her BSc, MSc and PhD degrees in Electrical Engineering from the University of British Columbia and University of Toronto, in 2012, 2015, and 2019, respectively. In 2021, Prof. ZHANG joined the controller IC design group of Analog Device Inc, Colorado Springs, to work on power IC design for automatic testing equipment (ATE) applications as a senior IC design engineer. Her academic career started in 2025 with the department of electrical Engineering at HKUST. Her research interests cover a wide spectrum, ranging from smart power ICs, power management ICs, integrated DC-DC converters, smart gate driver ICs, AI assisted power applications, packaging and thermal management, advanced power controllers. Prof. ZHANG serves as the technical committee member in ICD track for the IEEE ISPSD (since 2022).
