The Distinguished Lecture on “Liquid-Cooled Power Semiconductor Modules” will take place as follows:
Date: 22 October 2024 (Tuesday)
Time: 10:30 a.m. – 11:30 a.m.
Venue: Research Building N21, G/F, Room G013
The speaker is:
Prof. NG Wai Tung, Professor, The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto.
The Lecture is:
Liquid-Cooled Power Semiconductor Modules
Abstract:
The rapid growth of the Electric Vehicle (EV) market, sparked by climate change and government regulations, represents excellent business potential for automotive parts manufacturers. Traditional companies focusing on mechanical oriented components are finding the needs to develop numerous enabling technologies to produce cost effective, high performance and reliable EVs. This talk offers a quick review of advanced liquid-cooled power semiconductor modules for EV applications. More specially, examples of construction methods to assemble Silicon Carbide (SiC) power transistors in a thermal efficient liquid cooled package with optimum electrical performance will be presented. In addition, novel smart gate driver ICs with digital interface, novel Electro-Magnetic Interference (EMI) suppression, aging and health monitoring functions can be co-packaged with the SiC power transistors to form Intelligent Power Modules (IPMs). Novel and compact SiC power modules are the key to reduce cooling requirements, enhance reliability and electrical power conversion efficiency.
Biography:
Prof. NG Wai Tung (M’90, SM’04) received his B.A.Sc., M.A.Sc., and Ph.D. degrees in Electrical Engineering from the University of Toronto, in 1983, 1985 and 1990, respectively. Prof. NG is with the Edward S. Rogers Sr. Dept. of Electrical and Computer Engineering from the University of Toronto. He is also the director of the Toronto Nanofabrication Center (TNFC), and open access research facility. Prof. NG is a recognized researcher in the areas of power semiconductor devices and smart power integrated circuits. His research group has demonstrated many world-first innovative designs, including a digitally reconfigurable DC-DC power converter with resizable output stage [ISPSD 2006], a superjunction power FinFET [IEDM 2010], and a series of smart gate driver integrated circuits for Insulated Gate Bipolar Transistors (IGBTs) and Gallium Nitride (GaN) power transistors. Currently, Prof. NG’s group is actively engaged in the promotion of digitally reconfigurable gate driver circuits to improve the switching characteristics of GaN and Silicon Carbide (SiC) power transistors. These include many novel features such as one-step dead-time correction, indirect current sensing, dynamic driving strength to suppress Electromagnetic Interference (EMI), liquid-cooled packaging for intelligent power modules (IPMs), etc.
For more details, kindly find the event poster, abstract and bio.
