The Distinguished Lecture on “High Reliability GaN FET Drivers for Next-generation Power Electronics Technology” will take place as follows:
Date: 28 November 2024 (Thursday)
Time: 10:00 a.m. – 11:30 a.m.
Venue: Research Building N21, 3004
The speaker is:
Prof. MING Xin, Full Professor, University of Electronic Science and Technology of China, Chengdu, China
The Lecture is:
High Reliability GaN FET Drivers for Next-generation Power Electronics Technology
Abstract:
GaN devices achieve a good figure-of-merit compared to Si power devices, which can push switching frequency to MHz and break through the bottleneck of power density and efficiency of traditional power supplies. However, the physical particularity of GaN requires customized gate drive circuits to enhance reliability of GaN switch applications as well as its high frequency advantages. This presentation will introduce key-points in GaN high reliability gate drive, including level shifter, bootstrap circuit, high negative-voltage protection in dead time, EMI control, monolitic solution, DrGaN consideration and so on.
Biography:
Prof. MING received the M.Sc. and Ph.D. degrees in microelectronics from the University of Electronic Science and Technology of China (UESTC) in 2007 and 2012, respectively. From 2013 to 2014, he was a Visiting Scholar with the Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, USA and served as TPC member of ISPSD for power IC design from 2020 to 2024. He is currently a Full Professor with UESTC and works closely with industry companies. His research group interests include switching power supply, GaN/SiC drivers, LDOs and isolated power.
For more details, kindly find the event poster, abstract and bio.
