Date and Time: 20th November 2014 (Thursday), 11:00AM – 12:30PM
Venue: Room 1015, E11 (Faculty of Science and Technology), University of Macau
Speaker: Prof. Hao JIANG, Professor,
State Key Laboratory of Optoelectronic Materials and Technologies,
School of Physics and Engineering, Sun Yat-Sen University, Guangzhou, China
Language: Mandarin
Abstract:
This talk presents an overview of the development of the mainstream semiconductors, devices and applications from a historical perspective. Three generations of semiconductors, silicon (element), GaAs (compound), and GaN (wide bandgap compound), will be discussed respectively, with an emphasis on their progress and trends.
Biography:
Hao Jiang is a professor of Physics and Engineering at Sun Yat-Sen University in Guangzhou, China. He obtained his PhD degree on semiconductor from Nagoya Institute of Technology (NIT) in 2003. He worked as a research fellow in Aichi Science and Technology Foundation Cluster headquarters (2003-05) and an assistant professor in the Research Center for Nano-Device and System at NIT (2005-07). His main research areas include MOCVD growth of III-nitrides, high power and high efficiency InGaN/GaN blue LEDs, and high-sensitivity AlGaN UV photodetectors.