调研组

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Junmin Jiang, Yan Lu, Cheng Huang, Wing-Hung Ki, Philip K. T. Mok, A 2-/3-Phase Fully-Integrated Switched-Capacitor DC-DC Converter in Bulk-CMOS for Energy-Efficient Digital Circuits With 14% Efficiency Improvement

IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers (ISSCC)

pp. 366-367 Feb-2015
Zhicheng Lin, IEEE SSCS Pre-doctoral Achievement Award 2015

IEEE Solid-State Circuits Society

Feb-2015
Zhicheng Lin, Pui In Mak, R. P. Martins, A 0.028mm2 11mW Single-Mixing Blocker-Tolerant Receiver with Double-RF N-Path Filtering, S11 Centering, +13dBm OB-IIP3 and 1.5-to-2.9dB NF

IEEE International Solid-State Circuits Conference (ISSCC), Digest.

Pre-doctoral achievement award, pp. 36-37 Feb-2015
Ka-Meng Lei, ISSCC Student Travel Grant Award

IEEE Solid-State Circuits Society, 2015

Feb-2015
Ka-Meng Lei, Pui In Mak, Man-Kay Law, R. P. Martins, A Multi-Step Multi-Sample µNMR Relaxometer Using Inside-Magnet Digital Microfluidics and a Butterfly-Coil-Input CMOS Transceiver

IEEE International Solid-State Circuits Conference (ISSCC)

SRP Session 2, Paper No. 1 Feb-2015
Yan Zhu, Chi Hang Chan, Seng-Pan U, R. P. Martins, Sampling front-end for analog to digital converter

Granted Number: 8,947,283

Application Number: 13/915,949

US patent

Feb-2015
Jianyu Zhong, Yan Zhu, Chi Hang Chan, Sai Weng Sin, Seng-Pan U, R. P. Martins, A 12b 180MS/s 0.068mm2 Full-Calibration Integrated Pipelined-SAR ADC

International Solid State Circuits Conference (ISSCC)

Student Research Previews Feb-2015
Chi Hang Chan, IEEE SSCS Pre-doctoral Achievement Award 2015

The IEEE Solid-State Circuits Society

Feb-2015
Md. Tawfiq Amin, Pui In Mak, R. P. Martins, A 3.6mW 6GHz Current-Reuse VCO-Buffer with Improved Load Drivability in 65nm CMOS

Wiley International Journal of Circuit Theory and Applications

vol. 43, pp. 133–138 Jan-2015
Salahuddin Raju, Xing Li, Yan Lu, Chi-Ying Tsui, Wing-Hung Ki, Mansun Chan, C. Patrick Yue, Efficient wireless power transmission technology based on above-CMOS integrated (ACI) high quality inductors

IEEE International Electron Devices Meeting (IEDM)

pp. 12.4.1 - 12.4.4 Dec-2014
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